Stochastic approach to the smart quantum confinement model in porous silicon
محفوظ في:
| المؤلفون: | , |
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| التنسيق: | artículo original |
| تاريخ النشر: | 2002 |
| الوصف: | A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the luminescence emission of air-exposed specimens in terms of the presence of Si=O and Si=H bonds. Fitting of experimental data is performed to extract size-related statistical parameters. The results are in good agreement with the band-to-band and localized state-to-band transition theoretical framework. |
| البلد: | Kérwá |
| المؤسسة: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/322 |
| الوصول للمادة أونلاين: | http://dx.doi.org/10.1016/S0039-6028(02)01963-5 https://hdl.handle.net/10669/322 |
| كلمة مفتاحية: | Modelo semiempírico Métodos electroquímicos Fotoluminiscencia Silicio Óxido de Silicio Potencial de pozo Superficies semiconductoras |