Stochastic approach to the smart quantum confinement model in porous silicon
保存先:
| 著者: | , |
|---|---|
| フォーマット: | artículo original |
| 出版日付: | 2002 |
| その他の書誌記述: | A model that encompasses two approaches to explain the photoluminescence in p-type porous silicon is proposed. The model considers a stochastic distribution of nanocrystallite sizes within the porous matrix and explain the luminescence emission of air-exposed specimens in terms of the presence of Si=O and Si=H bonds. Fitting of experimental data is performed to extract size-related statistical parameters. The results are in good agreement with the band-to-band and localized state-to-band transition theoretical framework. |
| 国: | Kérwá |
| 機関: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/322 |
| オンライン･アクセス: | http://dx.doi.org/10.1016/S0039-6028(02)01963-5 https://hdl.handle.net/10669/322 |
| キーワード: | Modelo semiempírico Métodos electroquímicos Fotoluminiscencia Silicio Óxido de Silicio Potencial de pozo Superficies semiconductoras |