Thermal conductivity of GeSn alloys: a CMOS candidate for energy harvesting applications
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| Autores: | , , , , , |
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| פורמט: | artículo original |
| סטטוס: | Versión publicada |
| Fecha de Publicación: | 2024 |
| תיאור: | The thermal conductivity, κ, of thin GeSn semiconductors with Sn concentration of 12 at.% was studied by the 3-omega method. Accent is put on room temperature characterization where a small lattice conductivity of 4.5W/m-K was extracted. Similar performance was found but using the Raman thermometry optical method indicating the reliability of the measurements and showing GeSn alloys as promising materials for thermoelectric applications. |
| País: | Portal de Revistas TEC |
| מוסד: | Instituto Tecnológico de Costa Rica |
| Repositorio: | Portal de Revistas TEC |
| שפה: | Inglés |
| OAI Identifier: | oai:ojs.pkp.sfu.ca:article/7218 |
| גישה מקוונת: | https://revistas.tec.ac.cr/index.php/tec_marcha/article/view/7218 |
| מילת מפתח: | Thermoelectrics GeSn thermal conductivity 3-omega method characterization thin films termoeléctrico conductividad térmica método 3-omega caracterización películas delgadas |