Gowthaman, N., & Srivastava, V. M. (2021). Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices.
Citación estilo ChicagoGowthaman, Naveenbalaji, y Viranjay M. Srivastava. Dual Gate Material (Au and Pt) Based Double-gate MOSFET for High-speed Devices. 2021.
ציטוט MLAGowthaman, Naveenbalaji, y Viranjay M. Srivastava. Dual Gate Material (Au and Pt) Based Double-gate MOSFET for High-speed Devices. 2021.
אזהרה: ציטוטים אלה לעיתים לא מדויקים ב 100%.