Gowthaman, N., & Srivastava, V. M. (2021). Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices.
استشهاد بنمط شيكاغوGowthaman, Naveenbalaji, و Viranjay M. Srivastava. Dual Gate Material (Au and Pt) Based Double-gate MOSFET for High-speed Devices. 2021.
MLA استشهادGowthaman, Naveenbalaji, و Viranjay M. Srivastava. Dual Gate Material (Au and Pt) Based Double-gate MOSFET for High-speed Devices. 2021.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.