एपीए उद्धरण

Gowthaman, N., & Srivastava, V. M. (2021). Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices.

शिकागो स्टाइल उद्धरण

Gowthaman, Naveenbalaji, और Viranjay M. Srivastava. Dual Gate Material (Au and Pt) Based Double-gate MOSFET for High-speed Devices. 2021.

एमएलए उद्धरण

Gowthaman, Naveenbalaji, और Viranjay M. Srivastava. Dual Gate Material (Au and Pt) Based Double-gate MOSFET for High-speed Devices. 2021.

चेतावनी: ये उद्धरण हमेशा 100% सटीक नहीं हो सकते हैं.