APA Цитирование

Gowthaman, N., & Srivastava, V. M. (2021). Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices.

Chicago-стиль цитирования

Gowthaman, Naveenbalaji, y Viranjay M. Srivastava. Dual Gate Material (Au and Pt) Based Double-gate MOSFET for High-speed Devices. 2021.

MLA-цитирование

Gowthaman, Naveenbalaji, y Viranjay M. Srivastava. Dual Gate Material (Au and Pt) Based Double-gate MOSFET for High-speed Devices. 2021.

Предупреждение: эти цитированмия не могут быть всегда правильны на 100%.