Resolution improvements on poly(methyl methacrylate) as electron-beam resist
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| Autor: | |
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| Formato: | tesis de maestría |
| Fecha de Publicación: | 2012 |
| Descripción: | The present thesis expands the topic of lithographic resolution improvement of poly(methyl methacrylate) (PMMA) as a positive tone electron-beam resist. The investigation used electron-beam lithography (EBL) to define sub-10 nm structures on PMMA. Previous investigations obtained 25-nm-pitch dot arrays and 40-nm-pitch lines after AuPd pattern transfer. This thesis presents an improvement over these results, resolving 20-nm-pitch dot arrays and 34-nm-pitch nested L’s structures after Au/Ti lift-off.15-nm-pitch isolated double-dot and triple-dot structures were resolved and helped to learn more about the resolution limits of PMMA as electron-beam resist. In addition, this research used calculations regarding proximity effect, contrast limitations, and intrinsic resist roughness to determine the factors currently limiting resolution. A manuscript with these findings is currently being prepared, with the candidate featuring as lead author. The findings of this work were applied to collaborations on two separated areas of research: colloidal quantum dot placement and templating of protein assemblies. From the quantum dots placement collaboration a manuscript was already submitted for publication. This last section of the thesis also explains other lithography-related work, in specific Helium-ion milling of graphene and low-cost experiments on interference lithography. |
| País: | Kérwá |
| Institución: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/771 |
| Acceso en línea: | https://hdl.handle.net/10669/771 |
| Palabra clave: | pmma resolución nanotecnología nanofabricación litografía |