Electronic structure of silicon-based nanostructures

 

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Detalles Bibliográficos
Autores: Guzmán Verri, Gian Giacomo, Lew Yan Voon, Lok Chong
Formato: artículo original
Fecha de Publicación:2007
Descripción:We have developed a unifying tight-binding Hamiltonian that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp3s∗ and sp3 models up to first- and second-nearest neighbors, respectively. Our results show that the Si graphene-like sheets considered here are metals or zero-gap semiconductors, and that the corresponding Si nanotubes follow the so-called Hamada’s [Phys. Rev. Lett. 68, 1579 (1992)] rule. Comparison to a recent ab initio calculation is made.
País:Kérwá
Institución:Universidad de Costa Rica
Repositorio:Kérwá
OAI Identifier:oai:kerwa.ucr.ac.cr:10669/27863
Acceso en línea:http://journals.aps.org/prb/abstract/10.1103/PhysRevB.76.075131
https://hdl.handle.net/10669/27863
Palabra clave:silicene
tight-binding
electronic properties