Electronic structure of silicon-based nanostructures
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| Autores: | , |
|---|---|
| Formato: | artículo original |
| Fecha de Publicación: | 2007 |
| Descripción: | We have developed a unifying tight-binding Hamiltonian that can account for the electronic properties of recently proposed Si-based nanostructures, namely, Si graphene-like sheets and Si nanotubes. We considered the sp3s∗ and sp3 models up to first- and second-nearest neighbors, respectively. Our results show that the Si graphene-like sheets considered here are metals or zero-gap semiconductors, and that the corresponding Si nanotubes follow the so-called Hamada’s [Phys. Rev. Lett. 68, 1579 (1992)] rule. Comparison to a recent ab initio calculation is made. |
| País: | Kérwá |
| Institución: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/27863 |
| Acceso en línea: | http://journals.aps.org/prb/abstract/10.1103/PhysRevB.76.075131 https://hdl.handle.net/10669/27863 |
| Palabra clave: | silicene tight-binding electronic properties |