Thin-layer black phosphorus/GaAs heterojunction pn diodes
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| Autores: | , , , , |
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| Formato: | artículo original |
| Fecha de Publicación: | 2015 |
| Descripción: | Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorus emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorus layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorus sheet with a thickness on the order of 10 nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorus surface. |
| País: | Kérwá |
| Institución: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/86057 |
| Acceso en línea: | https://aip.scitation.org/doi/abs/10.1063/1.4922531 https://hdl.handle.net/10669/86057 |
| Palabra clave: | Chemical compounds Quantum efficiency Optoelectronic devices Heterostructures P-N junctions Electronic transport Electrical properties and parameters Schottky barriers Photoconductivity |