Thin-layer black phosphorus/GaAs heterojunction pn diodes
সংরক্ষণ করুন:
| লেখক: | , , , , |
|---|---|
| বিন্যাস: | artículo original |
| প্রকাশনার তারিখ: | 2015 |
| বিবরন: | Owing to its high carrier mobility and thickness-tunable direct band gap, black phosphorus emerges as a promising component of optoelectronic devices. Here, we evaluate the device characteristics of p-n heterojunction diodes wherein thin black phosphorus layers are interfaced with an underlying, highly n-doped GaAs substrate. The p-n heterojunctions exhibit close-to-ideal diode behavior at low bias, while under illumination they display a photoresponse that is evenly distributed over the entire junction area, with an external quantum efficiency of up to 10% at zero bias. Moreover, the observed maximum open circuit voltage of 0.6 V is consistent with the band gap estimated for a black phosphorus sheet with a thickness on the order of 10 nm. Further analysis reveals that the device performance is limited by the structural quality of the black phosphorus surface. |
| দেশ: | Kérwá |
| প্রতিষ্ঠান: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/86057 |
| অনলাইন ব্যবহার করুন: | https://aip.scitation.org/doi/abs/10.1063/1.4922531 https://hdl.handle.net/10669/86057 |
| মুখ্য শব্দ: | Chemical compounds Quantum efficiency Optoelectronic devices Heterostructures P-N junctions Electronic transport Electrical properties and parameters Schottky barriers Photoconductivity |