Growth of carbon structures through lowpressure chemical vapor deposition

 

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Chi tiết về thư mục
Nhiều tác giả: Varela-Fonseca, Stephanie Mariela, Hernández-Murillo, Camila, Montero-Zeledón, Ernesto, Gutiérrez-Fallas, Dionisio, Urcuyo, Roberto, Puente-Urbina, Allen
Định dạng: artículo original
Trạng thái:Versión publicada
Ngày xuất bản:2022
Miêu tả:Carbon allotropes have gained interest in recent decades due to their properties and the wide variety of possible technological applications they have demonstrated. For such reasons, obtaining these allotropes with different properties and coverage is extensively investigated. Chemical Vapor Deposition (CVD) is one of the most widely used techniques to obtain this type of materials with high quality and coverage in a controlled manner. In CVD, there are used transition metals as catalysts, gaseous carbon sources and high temperatures. In this report, carbon-on-copper structures were synthesized using Low Pressure Chemical Vapor Deposition (LPCVD) with acetylene as a carbon source. The copper substrates were heat-treated under a reducing hydrogen-argon atmosphere and then exposed to acetylene, varying the acetylene flow and the deposition time. The resulting materials were characterized by Optical Microscopy and Raman Spectroscopy. The approach followed allowed to determine the best conditions for the synthesis of monolayer graphene with irregular growth.
Quốc gia:Portal de Revistas TEC
Tổ chức giáo dục:Instituto Tecnológico de Costa Rica
Repositorio:Portal de Revistas TEC
Ngôn ngữ:Español
OAI Identifier:oai:ojs.pkp.sfu.ca:article/6067
Truy cập trực tuyến:https://revistas.tec.ac.cr/index.php/tec_marcha/article/view/6067
Từ khóa:Chemical Vapor Deposition (CVD)
Low-Pressure Chemical Vapor Deposition (LPCVD)
Carbon
Graphene
Raman Spectroscopy
Deposición Química en Fase de Vapor (CVD)
Deposición Química en Fase de Vapor a Baja Presión (LPCVD)
Carbono
Grafeno
Espectroscopia Raman