On the photoluminescence theory in nanocrystalline silicon: A new improvement
Guardat en:
| Autors: | , |
|---|---|
| Format: | artículo original |
| Data de publicació: | 2025 |
| Descripció: | We present an improved model for photoluminescence (PL) in nanocrystalline silicon based on LogNormal size distributions of quantum wires (QWs) and quantum dots (QDs). The model predicts four spectral components: band-to-band and localized-to-band recombinations in both QWs and QDs. This approach also captures the influence of oxide-related surface states. Experimental validation with porous silicon films, using Fourier-transform infrared and fluorescence spectroscopy, confirms the presence of oxide bands and supports the predicted PL contributions. The model provides a consistent framework for interpreting PL spectra and extracting nanostructure size distributions in silicon photonics. |
| Pais: | Kérwá |
| Institution: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| Idioma: | Inglés |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/104304 |
| Accés en línia: | https://hdl.handle.net/10669/104304 https://doi.org/10.1063/5.0293503 |
| Paraula clau: | Porous Silicon Materials Science Spectroscopy |