Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon

 

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Detalhes bibliográficos
Autores: Weisz, S. Z., Ramírez Porras, Arturo, Gómez, Manuel, Many, A., Goldstein, Yehuda, Savir, Esther
Formato: artículo original
Data de Publicação:1997
Descrição:Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.
País:Kérwá
Recursos:Universidad de Costa Rica
Repositorio:Kérwá
OAI Identifier:oai:kerwa.ucr.ac.cr:10669/80437
Acesso em linha:https://www.sciencedirect.com/science/article/pii/S0022231396004383
https://hdl.handle.net/10669/80437
Palavra-chave:Photoluminescence
Surface States
Porous silicon

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