Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon

 

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Dettagli Bibliografici
Autori: Weisz, S. Z., Ramírez Porras, Arturo, Gómez, Manuel, Many, A., Goldstein, Yehuda, Savir, Esther
Natura: artículo original
Data di pubblicazione:1997
Descrizione:Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.
Stato:Kérwá
Istituzione:Universidad de Costa Rica
Repositorio:Kérwá
OAI Identifier:oai:kerwa.ucr.ac.cr:10669/80437
Accesso online:https://www.sciencedirect.com/science/article/pii/S0022231396004383
https://hdl.handle.net/10669/80437
Keyword:Photoluminescence
Surface States
Porous silicon

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