Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon
保存先:
| 著者: | , , , , , |
|---|---|
| フォーマット: | artículo original |
| 出版日付: | 1997 |
| その他の書誌記述: | Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si. |
| 国: | Kérwá |
| 機関: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/80437 |
| オンライン･アクセス: | https://www.sciencedirect.com/science/article/pii/S0022231396004383 https://hdl.handle.net/10669/80437 |
| キーワード: | Photoluminescence Surface States Porous silicon |