Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon

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Bibliografske podrobnosti
Autores:	Weisz, S. Z., Ramírez Porras, Arturo, Gómez, Manuel, Many, A., Goldstein, Yehuda, Savir, Esther
Format:	artículo original
Fecha de Publicación:	1997
Opis:	Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.
País:	Kérwá
Institucija:	Universidad de Costa Rica
Repositorio:	Kérwá
OAI Identifier:	oai:kerwa.ucr.ac.cr:10669/80437
Online dostop:	https://www.sciencedirect.com/science/article/pii/S0022231396004383 https://hdl.handle.net/10669/80437
Ključna beseda:	Photoluminescence Surface States Porous silicon