On the photoluminescence theory in nanocrystalline silicon: A new improvement
সংরক্ষণ করুন:
| লেখক: | , |
|---|---|
| বিন্যাস: | artículo original |
| প্রকাশনার তারিখ: | 2025 |
| বিবরন: | We present an improved model for photoluminescence (PL) in nanocrystalline silicon based on LogNormal size distributions of quantum wires (QWs) and quantum dots (QDs). The model predicts four spectral components: band-to-band and localized-to-band recombinations in both QWs and QDs. This approach also captures the influence of oxide-related surface states. Experimental validation with porous silicon films, using Fourier-transform infrared and fluorescence spectroscopy, confirms the presence of oxide bands and supports the predicted PL contributions. The model provides a consistent framework for interpreting PL spectra and extracting nanostructure size distributions in silicon photonics. |
| দেশ: | Kérwá |
| প্রতিষ্ঠান: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| ভাষা: | Inglés |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/104304 |
| অনলাইন ব্যবহার করুন: | https://hdl.handle.net/10669/104304 https://doi.org/10.1063/5.0293503 |
| মুখ্য শব্দ: | Porous Silicon Materials Science Spectroscopy |