On the photoluminescence theory in nanocrystalline silicon: A new improvement
Đã lưu trong:
| Nhiều tác giả: | , |
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| Định dạng: | artículo original |
| Ngày xuất bản: | 2025 |
| Miêu tả: | We present an improved model for photoluminescence (PL) in nanocrystalline silicon based on LogNormal size distributions of quantum wires (QWs) and quantum dots (QDs). The model predicts four spectral components: band-to-band and localized-to-band recombinations in both QWs and QDs. This approach also captures the influence of oxide-related surface states. Experimental validation with porous silicon films, using Fourier-transform infrared and fluorescence spectroscopy, confirms the presence of oxide bands and supports the predicted PL contributions. The model provides a consistent framework for interpreting PL spectra and extracting nanostructure size distributions in silicon photonics. |
| Quốc gia: | Kérwá |
| Tổ chức giáo dục: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| Ngôn ngữ: | Inglés |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/104304 |
| Truy cập trực tuyến: | https://hdl.handle.net/10669/104304 https://doi.org/10.1063/5.0293503 |
| Từ khóa: | Porous Silicon Materials Science Spectroscopy |