On the photoluminescence theory in nanocrystalline silicon: A new improvement
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| Autores: | , |
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| 格式: | artículo original |
| Fecha de Publicación: | 2025 |
| 實物特徵: | We present an improved model for photoluminescence (PL) in nanocrystalline silicon based on LogNormal size distributions of quantum wires (QWs) and quantum dots (QDs). The model predicts four spectral components: band-to-band and localized-to-band recombinations in both QWs and QDs. This approach also captures the influence of oxide-related surface states. Experimental validation with porous silicon films, using Fourier-transform infrared and fluorescence spectroscopy, confirms the presence of oxide bands and supports the predicted PL contributions. The model provides a consistent framework for interpreting PL spectra and extracting nanostructure size distributions in silicon photonics. |
| País: | Kérwá |
| 機構: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| 語言: | Inglés |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/104304 |
| 在線閱讀: | https://hdl.handle.net/10669/104304 https://doi.org/10.1063/5.0293503 |
| Palabra clave: | Porous Silicon Materials Science Spectroscopy |