Spatially Resolved Oxidation and Enhanced Photooxidation in Nanocrystalline Silicon
محفوظ في:
| المؤلفون: | , |
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| التنسيق: | artículo original |
| تاريخ النشر: | 2024 |
| الوصف: | Spatially resolved oxidation of nanocrystalline silicon surfaces has been studied using Fourier Fourier-transformed infrared microscopy. At the same time, photoluminescence (PL) quenching has been recorded. Both characteristics are related to the increase of silicon oxide species on the sample surfaces. Illumination of surfaces by blue light increases oxidation rates and speeds PL quenching in the form of a stretched exponential function. A possible explanation of this behavior considering quantum dots and quantum wires present in the material is proposed. |
| البلد: | Kérwá |
| المؤسسة: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| اللغة: | Inglés |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/104305 |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10669/104305 https://doi.org/10.1142/S0218625X2550060X |
| كلمة مفتاحية: | Porous Materials Photoluminescence Oxidation |