Spatially Resolved Oxidation and Enhanced Photooxidation in Nanocrystalline Silicon
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| Autores: | , |
|---|---|
| 格式: | artículo original |
| Fecha de Publicación: | 2024 |
| 實物特徵: | Spatially resolved oxidation of nanocrystalline silicon surfaces has been studied using Fourier Fourier-transformed infrared microscopy. At the same time, photoluminescence (PL) quenching has been recorded. Both characteristics are related to the increase of silicon oxide species on the sample surfaces. Illumination of surfaces by blue light increases oxidation rates and speeds PL quenching in the form of a stretched exponential function. A possible explanation of this behavior considering quantum dots and quantum wires present in the material is proposed. |
| País: | Kérwá |
| 機構: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| 語言: | Inglés |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/104305 |
| 在線閱讀: | https://hdl.handle.net/10669/104305 https://doi.org/10.1142/S0218625X2550060X |
| Palabra clave: | Porous Materials Photoluminescence Oxidation |