Phototransport Properties of a-SiC:H Alloys

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書誌詳細
著者:	Balberg, I., Nery, Guillermo, Ramírez Porras, Arturo, Resto, O., Weisz, S. Z., Lubianiker, Y.
フォーマット:	artículo original
出版日付:	1995
その他の書誌記述:	We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime.
国:	Kérwá
機関:	Universidad de Costa Rica
Repositorio:	Kérwá
OAI Identifier:	oai:kerwa.ucr.ac.cr:10669/80435
オンライン･アクセス:	https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/phototransport-properties-of-asich-alloys/319AB54D3CB8E22AE5D2E8487751BD56 https://hdl.handle.net/10669/80435
Access Level:	acceso abierto
キーワード:	Amorphous silicon Alloys