Phototransport Properties of a-SiC:H Alloys
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| Autoři: | , , , , , |
|---|---|
| Médium: | artículo original |
| Datum vydání: | 1995 |
| Popis: | We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime. |
| Země: | Kérwá |
| Instituce: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/80435 |
| On-line přístup: | https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/phototransport-properties-of-asich-alloys/319AB54D3CB8E22AE5D2E8487751BD56 https://hdl.handle.net/10669/80435 |
| Klíčové slovo: | Amorphous silicon Alloys |