Phototransport Properties of a-SiC:H Alloys

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書目詳細資料
Autores:	Balberg, I., Nery, Guillermo, Ramírez Porras, Arturo, Resto, O., Weisz, S. Z., Lubianiker, Y.
格式:	artículo original
Fecha de Publicación:	1995
實物特徵:	We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime.
País:	Kérwá
機構:	Universidad de Costa Rica
Repositorio:	Kérwá
OAI Identifier:	oai:kerwa.ucr.ac.cr:10669/80435
在線閱讀:	https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/phototransport-properties-of-asich-alloys/319AB54D3CB8E22AE5D2E8487751BD56 https://hdl.handle.net/10669/80435
Access Level:	acceso abierto
Palabra clave:	Amorphous silicon Alloys