Phototransport Properties of a-SiC:H Alloys

Gorde:

Xehetasun bibliografikoak
Egileak:	Balberg, I., Nery, Guillermo, Ramírez Porras, Arturo, Resto, O., Weisz, S. Z., Lubianiker, Y.
Formatua:	artículo original
Argitaratze data:	1995
Deskribapena:	We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime.
Herria:	Kérwá
Erakundea:	Universidad de Costa Rica
Repositorio:	Kérwá
OAI Identifier:	oai:kerwa.ucr.ac.cr:10669/80435
Sarrera elektronikoa:	https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/phototransport-properties-of-asich-alloys/319AB54D3CB8E22AE5D2E8487751BD56 https://hdl.handle.net/10669/80435
Gako-hitza:	Amorphous silicon Alloys