निर्यात तैयार है — 

Phototransport Properties of a-SiC:H Alloys

 

में बचाया:
ग्रंथसूची विवरण
लेखकों: Balberg, I., Nery, Guillermo, Ramírez Porras, Arturo, Resto, O., Weisz, S. Z., Lubianiker, Y.
स्वरूप: artículo original
प्रकाशन तिथि:1995
विवरण:We report a study of the mobility-lifetime products of the two charge carriers in a-SiC:H alloys. The measurements were carried out as a function of the carbon concentration and the temperature. An analysis, relying on the interpretation of the corresponding light intensity exponents, indicates that neutral dangling bonds control the electrons' lifetime while another recombination center controls the holes' lifetime.
देश:Kérwá
संस्थान:Universidad de Costa Rica
Repositorio:Kérwá
OAI Identifier:oai:kerwa.ucr.ac.cr:10669/80435
ऑनलाइन पहुंच:https://www.cambridge.org/core/journals/mrs-online-proceedings-library-archive/article/phototransport-properties-of-asich-alloys/319AB54D3CB8E22AE5D2E8487751BD56
https://hdl.handle.net/10669/80435
संकेत शब्द:Amorphous silicon
Alloys

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