High Performance Graphene–Oxide–Metal Diode through Bias‐Induced Barrier Height Modulation

 

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Bibliografiska uppgifter
Författarna: Urcuyo Solórzano, Roberto, Duong, Dinh Loc, Jeong, Hye Yun, Burghard, Marko, Kern, Klaus
Materialtyp: artículo
Utgivningstid:2016
Beskrivning:Graphene–oxide–metal diodes are presented whose performance is preserved even for thin oxide layers, as required for high frequency applications. The diodes, which rely upon bias-induced modulation of graphene's work function, thus overcome a major, longstanding issue of metal–insulator–metal diodes.
Land:Kérwá
Organisation:Universidad de Costa Rica
Repositorio:Kérwá
OAI Identifier:oai:kerwa.ucr.ac.cr:10669/86058
Länkar:https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201600223
https://hdl.handle.net/10669/86058
Nyckelord:Graphene
Mwork function modulationetal–insulator–metal diodes
Work function modulation