High Performance Graphene–Oxide–Metal Diode through Bias‐Induced Barrier Height Modulation
সংরক্ষণ করুন:
| লেখক: | , , , , |
|---|---|
| বিন্যাস: | artículo |
| প্রকাশনার তারিখ: | 2016 |
| বিবরন: | Graphene–oxide–metal diodes are presented whose performance is preserved even for thin oxide layers, as required for high frequency applications. The diodes, which rely upon bias-induced modulation of graphene's work function, thus overcome a major, longstanding issue of metal–insulator–metal diodes. |
| দেশ: | Kérwá |
| প্রতিষ্ঠান: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/86058 |
| অনলাইন ব্যবহার করুন: | https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201600223 https://hdl.handle.net/10669/86058 |
| মুখ্য শব্দ: | Graphene Mwork function modulationetal–insulator–metal diodes Work function modulation |