High Performance Graphene–Oxide–Metal Diode through Bias‐Induced Barrier Height Modulation
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| Autores: | , , , , |
|---|---|
| 格式: | artículo |
| Fecha de Publicación: | 2016 |
| 實物特徵: | Graphene–oxide–metal diodes are presented whose performance is preserved even for thin oxide layers, as required for high frequency applications. The diodes, which rely upon bias-induced modulation of graphene's work function, thus overcome a major, longstanding issue of metal–insulator–metal diodes. |
| País: | Kérwá |
| 機構: | Universidad de Costa Rica |
| Repositorio: | Kérwá |
| OAI Identifier: | oai:kerwa.ucr.ac.cr:10669/86058 |
| 在線閱讀: | https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.201600223 https://hdl.handle.net/10669/86058 |
| Palabra clave: | Graphene Mwork function modulationetal–insulator–metal diodes Work function modulation |