Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon

Wedi'i Gadw mewn:

Manylion Llyfryddiaeth
Awduron:	Weisz, S. Z., Ramírez Porras, Arturo, Gómez, Manuel, Many, A., Goldstein, Yehuda, Savir, Esther
Fformat:	artículo original
Dyddiad Cyhoeddi:	1997
Disgrifiad:	Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.
Gwlad:	Kérwá
Sefydliad:	Universidad de Costa Rica
Repositorio:	Kérwá
OAI Identifier:	oai:kerwa.ucr.ac.cr:10669/80437
Mynediad Ar-lein:	https://www.sciencedirect.com/science/article/pii/S0022231396004383 https://hdl.handle.net/10669/80437
Allweddair:	Photoluminescence Surface States Porous silicon