Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon

Guardado en:

書目詳細資料
Autores:	Weisz, S. Z., Ramírez Porras, Arturo, Gómez, Manuel, Many, A., Goldstein, Yehuda, Savir, Esther
格式:	artículo original
Fecha de Publicación:	1997
實物特徵:	Measurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.
País:	Kérwá
機構:	Universidad de Costa Rica
Repositorio:	Kérwá
OAI Identifier:	oai:kerwa.ucr.ac.cr:10669/80437
在線閱讀:	https://www.sciencedirect.com/science/article/pii/S0022231396004383 https://hdl.handle.net/10669/80437
Palabra clave:	Photoluminescence Surface States Porous silicon